2
RF Device Data
Freescale Semiconductor, Inc.
AFT05MS031NR1 AFT05MS031GNR1
Table 1. Maximum Ratings
Rating
Symbol
Value
Unit
Drain--Source Voltage
VDSS
--0.5, +40
Vdc
Gate--Source Voltage
VGS
--6.0, +12
Vdc
Operating Voltage
VDD
17, +0
Vdc
Storage Temperature Range
Tstg
--65 to +150
?C
Case Operating Temperature Range
TC
--40 to +150
?C
Operating Junction Temperature Range
(1,2)
TJ
--40 to +225
?C
Total Device Dissipation @ TC
=25?C
Derate above 25?C
PD
294
1.47
W
W/?C
Table 2. Thermal Characteristics
Characteristic
Symbol
Value
(2,3)
Unit
Thermal Resistance, Junction to Case
Case Temperature 79?C, 31 W CW, 13.6 Vdc, IDQ
= 10 mA, 520 MHz
R?JC
0.67
?C/W
Table 3. ESD Protection Characteristics
Test Methodology
Class
Human Body Model (per JESD22--A114)
2, passes 2500 V
Machine Model (per EIA/JESD22--A115)
A, passes 100 V
Charge Device Model (per JESD22--C101)
IV, passes 2000 V
Table 4. Moisture Sensitivity Level
Test Methodology
Rating
Package Peak Temperature
Unit
Per JESD22--A113, IPC/JEDEC J--STD--020
3
260
?C
Table 5. Electrical Characteristics
(TA
=25?C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
Off Characteristics
Zero Gate Voltage Drain Leakage Current
(VDS
=40Vdc,VGS
=0Vdc)
IDSS
—
—
2
?Adc
Zero Gate Voltage Drain Leakage Current
(VDS
= 13.6 Vdc, VGS
=0Vdc)
IDSS
—
—
1
?Adc
Gate--Source Leakage Current
(VGS
=5Vdc,VDS
=0Vdc)
IGSS
—
—
600
nAdc
On Characteristics
Gate Threshold Voltage
(VDS
=10Vdc,ID
=115?Adc)
VGS(th)
1.6
2.1
2.6
Vdc
Drain--Source On--Voltage
(VGS
=10Vdc,ID
=1.2Adc)
VDS(on)
—
0.13
—
Vdc
Forward Transconductance
(VDS
=10Vdc,ID
=7.5Adc)
gfs
—
5.8
—
S
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
3. Refer to AN1955,
Thermal Measurement Methodology of RF Power Amplifiers.
Go to http://www.freescale.com/rf.
Select Documentation/Application Notes -- AN1955.
(continued)
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AFT09MS031NR1
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